A 68-85GHz Current-Combining Power Amplifier with 20% PAE and 17dBm P<sub>sat</sub> in 40-nm CMOS-Reference-Cited by-同舟云学术

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A 68-85GHz Current-Combining Power Amplifier with 20% PAE and 17dBm P_sat in 40-nm CMOS

Published:2023-05-21 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on Circuits and Systems (ISCAS)
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Author:

Fang Jiaqin¹,Feng Guangyin¹,Wang Yanjie¹

Affiliation:

1. School of Microelectronics, South China University of Technology,Guangzhou,China

Funder

Natural Science Foundation of Guangdong Province

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10181241/10181318/10181840.pdf?arnumber=10181840

Reference12 articles.

1. An E-Band Compact Power Amplifier for Future Array-Based Backhaul Networks in 22nm FD-SOI;çelik;IEEE Radio Frequency Integrated Circuits Symposium (RFIC),0

2. A 26.4-dB Gain 15.82-dBm 77-GHz CMOS Power Amplifier With 15.9% PAE Using Transformer-Based Quadrature Coupler Network

3. A Two-Way Current-Combining W-band Power Amplifier Achieving 17.4-dBm Output Power with 19.4% PAE in 65-nm Bulk CMOS

4. A Compact E-Band Power Amplifier With Gain-Boosting and Efficiency Enhancement

5. Single and Power-Combined Linear E-Band Power Amplifiers in 0.12-$\mu$ m SiGe With 19-dBm Average Power 1-GBaud 64-QAM Modulated Waveforms

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