A Two-Way Current-Combining W-band Power Amplifier Achieving 17.4-dBm Output Power with 19.4% PAE in 65-nm Bulk CMOS
Author:
Affiliation:
1. Fudan University,State Key Laboratory of ASIC & System,China Shanghai,China,201203
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shanghai
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9937201/9937203/09937261.pdf?arnumber=9937261
Reference12 articles.
1. W-band CMOS amplifiers achieving +10dBm saturated output power and 7.5dB NF;sandstrom;IEEE Int Solid-State Circuits Conf Dig Tech Papers,2009
2. A 94 GHz 3D Image Radar Engine With 4TX/4RX Beamforming Scan Technique in 65 nm CMOS Technology
3. A 94GHz differential power amplifier in 45nm LP CMOS
4. 94GHz power-combining power amplifier with +13dBm saturated output power in 65nm CMOS
5. Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 68-85GHz Current-Combining Power Amplifier with 20% PAE and 17dBm Psat in 40-nm CMOS;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21
2. A two-way three-stage W-band power amplifier with series-parallel inductor-based T-type inter-stage matching network;Microelectronics Journal;2023-05
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