Interface states in high temperature SiC gas sensing-Reference-Cited by-同舟云学术

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Interface states in high temperature SiC gas sensing

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Container-title:Proceedings of IEEE Sensors
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Author:

Ghosh R.N.,Tobias P.,Ejakov S.G.,Golding B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8046/22243/01037271.pdf?arnumber=1037271

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies;IEEE Transactions on Electron Devices;2023-04

2. Smart systems based on silicon carbide semiconductor technology for detection of combustible gas leakage in security applications;Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence;2018-10-08

3. Specialized Silicon Carbide Devices and Applications;Fundamentals of Silicon Carbide Technology;2014-09-26

4. Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3(001) as a function of annealing temperature;physica status solidi (a);2013-08-28

5. Dual-mode operation of a Pd/AlN/SiC device for hydrogen sensing;Sensors and Actuators B: Chemical;2008-01

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