Author:
Reddy B. Naresh Kumar,Sarangam K,Veeraiah T.,Cheruku Ramalingaswamy
Cited by
22 articles.
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1. A radiation-hardened 20T SRAM Cell with high reliability and low power consumption;2024 IEEE International Test Conference in Asia (ITC-Asia);2024-08-18
2. Design of Low Power HS-14T SRAM cell and analysis for High-Speed Applications;2024 IEEE International Conference on Applied Electronics and Engineering (ICAEE);2024-07-27
3. Design of Radiation Hardened SRAM Cell with High Speed and Write Stability for Space Applications;2024 IEEE International Conference on Information Technology, Electronics and Intelligent Communication Systems (ICITEICS);2024-06-28
4. Enhancement of Sram Read and Write Noise Margin by Device Performance Adjustment;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
5. Extensive Investigation on Even-Transistor-Configuration CMOS-based SRAM;Nanoscale Field Effect Transistors: Emerging Applications;2023-12-19