Transistor characterization and modeling and the use of embedding device models for the design of microwave power amplifiers-Reference-Cited by-同舟云学术

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Transistor characterization and modeling and the use of embedding device models for the design of microwave power amplifiers

Published:2015-10 Issue: Volume: Page:
ISSN:
Container-title:2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)
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Author:

Roblin Patrick,Martinez-Rodriguez Francisco J.,Hsiu Chen Chang ,Chenggang Xie ,Martinez-Lopez Jose I.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7315051/7330340/07330387.pdf?arnumber=7330387

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Power Amplifier Design Using Nonlinear Embedding;Analog Circuits and Signal Processing;2020

2. On the design of GaN Chireix power amplifiers using an embedding device model;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2016-02-16

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