Author:
Rawat Karun,Roblin Patrick,Koul Shiban Kishen
Publisher
Springer International Publishing
Reference23 articles.
1. Raffo, A., Scappaviva, F., & Vannini, G. (2009). A new approach to microwave power amplifier design based on the experimental characterization of the intrinsic electron-device load line. IEEE Transactions on Microwave Theory and Techniques, 57(7), 1743–1752.
2. Vadalà, V., Avolio, G., Raffo, A., Schreurs, D. M. M.-P., & Vannini, G. (2012). Nonlinear embedding and de-embedding techniques for large-signal FET measurements. Microwave and Optical Technology Letters, 54(12), 2835–2838.
3. Jang, H., Roblin, P., & Xie, Z. (2014). Model-based nonlinear embedding for power amplifier design. IEEE Transactions on Microwave Theory and Techniques, 62(9), 1986–2002.
4. Angelov, I., Thorsell, M., Andersson, K., Rorsman, N., & Zirath, H. (2012). Recent results on using LSVNA for compact modeling of GaN FET devices. In IEEE International Microwave Symposium Workshop (WMB): On “Device Model Extraction form Large-Signal Measurements,” Montreal, June 2012.
5. Roblin, P., Martinez-Rodriguez, F., Chang, H. C., Xie, C. G., & Martinez-Lopez, J. I. (2015). Transistor characterization and modeling and the use of embedding device models for the design of microwave power amplifiers. In IEEE Proceedings of Integrated Nonlinear Microwave Millimetre-Wave Circuits Workshop, October, pp. 1–4.