On the design of GaN Chireix power amplifiers using an embedding device model-Reference-Cited by-同舟云学术

On the design of GaN Chireix power amplifiers using an embedding device model

Published:2016-02-16 Issue:1 Volume:30 Page:e2148
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Roblin Patrick¹,Chang Hsiu-Chen¹,Martinez-Rodriguez Francisco J.¹²,Xie Chenggang³,Martinez-Lopez Jose I.²

Affiliation:

1. Department of Electrical and Computer Engineering; The Ohio State University; Columbus OH USA

2. Facultad de Ingenieria; Universidad Nacional Autonoma de Mexico; Mexico City 04510 Mexico

3. Rockwell Collins; Cedar Rapids 52498 IA USA

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference26 articles.

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3. Avolio G Raffo A Schreurs D Vannini G Nauwelaers B Nonlinear deembedding of microwave large-signal measurements Microwave Measurement Conference (79th ARFTG) Montreal, Quebec 2012 1 6

4. A new approach to microwave power amplifier design based on the experimental characterization of the intrinsic electron-device load line;Raffo;IEEE Transactions on Microwave Theory and Techniques,2009

5. Raffo A Vadalà V Di Falco S Scappaviva F Vannini G Hybrid approach to microwave power amplifier design Workshop on Int egrated Nonlinear Microwave and Millimeter-Wave Circuits (IN-MMIC) Goteborg, Sweden 2010 33 36

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