A scalable large‐signal model with self‐heating effect based on a hybrid‐scaling rule for GaN high‐electron‐mobility transistors

Author:

Gu Siyu1ORCID

Affiliation:

1. School of Microelectronics, Tianjin University Tianjin China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference38 articles.

1. Broadband GaN Class-E Power Amplifier for Load Modulated Delta Sigma and 5G Transmitter Applications

2. GaN‐based RF power devices and amplifiers;Mishra UK;IEEE Topical Conf RF/Microw Power Amplif Radio Wirel Appl Anaheim,2008

3. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

4. A novel method to dynamic thermal impedance and channel temperature extraction of GaN HEMTs;Wang L;Int J Numer Methods Eng,2020

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1. Scalable GaN-HEMT Model for X-band RF Applications;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. Behavioral-level modelling of GaN HEMT large signal based on Pelican-Gaussian process regression algorithm;Microelectronics Journal;2024-01

3. Study of X-Parameters Modeling for Microwave Power Devices Based on ANNs;2023 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO);2023-06-28

4. A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

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