The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications

Author:

Frohman-Bentchkowsky D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 75 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Inkjet-printed MoS2-based field-effect transistors with graphene and hexagonal boron nitride inks;Journal of Vacuum Science & Technology B;2020-07

2. Materials and Device Reliability in SONOS Memories;Charge-Trapping Non-Volatile Memories;2017

3. Address Scrambling and Data Inversion Techniques for Yield Enhancement of NROM-Based ROMs;IEEE Transactions on Computers;2015-05-01

4. Introduction to NVM Devices;Charge-Trapping Non-Volatile Memories;2015

5. An Efficient Test and Repair Flow for Yield Enhancement of One-Time-Programming NROM-Based ROMs;IEICE Transactions on Information and Systems;2013

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