Publisher
Springer International Publishing
Reference75 articles.
1. Baik SJ, Choi I, Chung U-I, Moon JT (2004) Engineering on tunnel barrier and dot surface in Si nanocrystal memories. Solid State Electron 48:1461–1690
2. Bez R, Camerlenghi E, Modelli A, Visconti A (2003) Introduction to flash memory. Proc IEEE 91(4):489–502
3. Brewer JE, Gill M (2008) Nonvolatile memory technologies with emphasis on Flash. Wiley, New York, NY
4. Bukowski T, Simmons JH (2002) Quantum dot research: current state and future prospects. Crit Rev Solid State Mater Sci 27:119–142
5. Burghartz JN (ed) (2013) Guide to state-of-the-art electron devices. Wiley, New York, NY
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