Effects of pre- and post-annealing treatments on silicon Schottky barrier diodes-Reference-Cited by-同舟云学术

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Effects of pre- and post-annealing treatments on silicon Schottky barrier diodes

Published:1970 Issue:3 Volume:58 Page:492-494
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Saltich J.L.,Terry L.E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31130/01449599.pdf?arnumber=1449599

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures;Applied Physics A Solids and Surfaces;1986-02

2. Variation of the effective Richardson constant of Pt‐Si Schottky diode due to annealing treatment;Applied Physics Letters;1985-03-15

3. New method for control of Schottky‐barrier height;Applied Physics Letters;1981-07

4. Device Fabrication;Semiconducting Devices;1976

5. Bibliography;Heterojunctions and Metal Semiconductor Junctions;1972

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