1. Abe, H., “The application of gas plasma to the fabrication of MOS LSI”, Oyo Buturi, 44 (Suppl.), 287–95 (1975), EEA78-41686.
2. Adamic, J. W., Jr., “Increasing the field-inversion voltage of metal-oxide-on-silicon integrated circuits”, Patent USA 3753806, Publ. August 1973, CA79-130633.
3. Alcott, G. J., “Self-aligned metal-oxide-semiconductor transistors”, Patent USA 3910804, Publ. October 1975, CA83-201126.
4. Arita, S., “Method for manufacturing a MOS integrated circuit”, Patent USA 3865650, Publ. February 1975, EEA78-33237.
5. Armstrong, W. E. and Toliver, D. L., “A scanning electron microscope investigation of glass flow in MOS integrated circuit fabrication”, J. Electrochem. Soc., 121, 307–10 (1974), EEA77-14594.