Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Author:

Lecourt Francois,Agboton Alain,Ketteniss Nico,Behmenburg Hannes,Defrance Nicolas,Hoel Virginie,Kalisch Holger,Vescan Andrei,Heuken Michael,De Jaeger Jean-Claude

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE;Applied Physics Letters;2024-07-01

2. Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate;Applied Physics Letters;2024-04-29

3. 31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation;IEEE Electron Device Letters;2024-03

4. Advanced Down-Scaling Technology and its Physical Mechanism for 515 GHz GaN HEMT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

5. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14

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