Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method-Reference-Cited by-同舟云学术

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Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Published:2014-03 Issue:3 Volume:35 Page:360-362
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hwang Chi-Sun,Park Sang-Hee Ko,Oh Himchan,Ryu Min-Ki,Cho Kyoung-Ik,Yoon Sung-Min

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6746036/06705629.pdf?arnumber=6705629

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition;Materials Science in Semiconductor Processing;2024-10

2. Optimizing Length Scalability of InGaZnO Thin‐Film Transistors through Lateral Carrier Profile Engineering and Negative ΔL Extension Structure;Advanced Electronic Materials;2024-06-18

3. Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm;Materials Science in Semiconductor Processing;2024-03

4. Effect of source–drain contact and channel length on the performance of vertical thin-film transistors;AIP Advances;2023-10-01

5. CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor;Nature Communications;2023-09-28

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