AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Texas at Dallas, Richardson, TX, USA
2. Texas Instruments, Dallas, TX, USA
Funder
Texas Instrument Automotive Group and Semiconductor Research Corporation/Texas Analog Center of Excellence
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Aerospace Engineering,Automotive Engineering
Link
http://xplorestaging.ieee.org/ielx7/25/10287112/10113180.pdf?arnumber=10113180
Reference99 articles.
1. Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
2. Degradation of hexagonal silicon-carbide-based bipolar devices
3. High temperature pulsed-gate robustness testing of SiC power MOSFETs
4. Precursors of Gate-Oxide Degradation in Silicon Carbide MOSFETs
5. Channel Hot-Carrier Effect of 4H-SiC MOSFET
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1. Switching Transient-Based Junction Temperature Estimation of SiC MOSFETs With Aging Compensation;IEEE Transactions on Power Electronics;2024-10
2. On-Line Digital Fine Monitoring of SiC MOSFET Gate-Oxide Health: A Dual-Channel Gate Driving Approach;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
3. Review on the Thermal Parameters Applications in the Reliability of Power Semiconductor Device;2024 IEEE 7th International Electrical and Energy Conference (CIEEC);2024-05-10
4. Offline Fault Diagnosis for 2-Level Inverter: Short-Circuit and Open-Circuit Detection;Electronics;2024-04-26
5. Design and Implementation Of Traction Inverter and its Examination;2024 5th International Conference on Recent Trends in Computer Science and Technology (ICRTCST);2024-04-09
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