Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Reliability of SiC power devices and its influence on their commercialization — review, status, and remaining issues;Treu,2010
2. Advances in silicon carbide MOS technology;Mawby,2002
3. Interfaces between 4H-SiC and SiO2: microstructure, nanochemistry, and near-interface traps;Pippel;J. Appl. Phys.,2005
4. Gate oxide reliability issues of SiC MOSFETs under short-circuit operation;Nguyen;IEEE Trans. Power Electron.,2015
5. On the evaluation of gate dielectrics for 4H-SiC based power MOSFETs;Nawaz;Act. Passive Electron. Compon.,2014
Cited by
23 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献