7-Bit/2Cell (X3.5), 9-Bit/2Cell (X4.5) NAND Flash Memory: Half Bit technology
Author:
Affiliation:
1. Institute of Memory Technology Research & Development,Kioxia Corporation,Japan
2. Kioxia Corporation,Memory Div,Japan
3. Kioxia Corporation,Memory Development Strategy Div,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10145914/10145815/10145980.pdf?arnumber=10145980
Reference6 articles.
1. A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface
2. A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96Word-Line-Layer Technology;shibata;ISSCC,2019
3. Future of Non-Volatile Memory -From Storage to Computing-
4. A 19nm 112.8mm2 64Gb Multi-Level Flash Memory with 400Mb/s/pin 1.8V Toggle Mode Interface;shibata;ISSCC,2012
5. A 5.6MB/s 64Gb 4b/Cell NAND flash memory in 43nm;trimh;ISSCC,2009
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1. Novel Multi-Level Coding and Architecture Enabling Fast Random Access for Flash Memory;2024 IEEE International Memory Workshop (IMW);2024-05-12
2. Random Flip Bit Aware Reading for Improving High-Density 3-D NAND Flash Performance;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-05
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