Recent Advances on Electromigration in Cu/SiO2 to Cu/SiO2 Hybrid Bonds for 3D Integrated Circuits
Author:
Affiliation:
1. Univ. Grenoble Alpes,CEA-Leti,Grenoble,France,F-38000
2. STMicroelectronics,Crolles Cedex,France,F-38926
3. University of Bordeaux,IMS Laboratory,Talence,France,F-33405
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118173.pdf?arnumber=10118173
Reference18 articles.
1. Mass Transport-Induced Failure of Hybrid Bonding-Based Integration for Advanced Image Sensor Applications
2. Electromigration Behavior of Cu/SiCN to Cu/SiCN Hybrid Bonds for 3D Integrated Circuits
3. Electromigration in hybrid bonding interconnects for 3-D IC impact of the diffusion barrier
4. Mass transport-induced failure in direct copper (Cu) bonding interconnects for 3-D integration
5. Advances toward reliable high density Cu-Cu interconnects by Cu-SiO2 direct hybrid bonding
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3. Development and Characterizations of Fine Pitch Flip-Chip Interconnection Using Silver Sintering;2023 24th European Microelectronics and Packaging Conference & Exhibition (EMPC);2023-09-11
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