The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper)
Author:
Affiliation:
1. IMEC,Leuven,Belgium,B-3001
2. Katholieke Universiteit Leuven,ESAT,Department of Electrical Engineering,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118026.pdf?arnumber=10118026
Reference17 articles.
1. Assessment of Transistor Aging Models in a 28nm CMOS Technology at a Wide Range of Stress Conditions
2. Ubiquitous relaxation in BTI stressing—New evaluation and insights
3. A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability
4. Off-state stress degradation mechanism on advanced p-MOSFETs
5. Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the $\{\boldsymbol{V_{G}}, \boldsymbol{V_{D}}\}$ bias space
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology;IEEE Transactions on Device and Materials Reliability;2023-09
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