Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

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Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
language:
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Author:

Kim Dongyoung¹,DeBoer Skylar¹,Mancini Stephen A¹,Isukapati Sundar Babu¹,Lynch Justin¹,Yun Nick¹,Morgan Adam J¹,Jang Seung Yup¹,Sung Woongje¹

Affiliation:

1. State University of New York Polytechnic Institute Colleges of Nanoscale Science and Engineering,Albany,NY,12203

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118091.pdf?arnumber=10118091

Reference9 articles.

1. The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs

2. An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs

3. Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness

4. Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation

5. Dynamic C GD and dV/dt in Superjunction MOSFETs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique;Micromachines;2023-12-07

2. SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance;Electronics;2023-11-24

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