Non-Isothermal Simulations to Optimize SiC MOSFETs for Enhanced Short-Circuit Ruggedness
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9125439/9128217/09128324.pdf?arnumber=9128324
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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5. Enhanced Conduction and Switching Performance of 1.2 kV 4H-SiC MOSFETs through High JFET Doping Concentration;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04
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