A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited)
Author:
Affiliation:
1. University of Toulouse, CNRS, INPT, UPS,LAPLACE,Toulouse,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529493.pdf?arnumber=10529493
Reference17 articles.
1. Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM
2. Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress
3. Dependence of Short-Circuit Withstand Capability of SiC MOSFETs on Short-Circuit Failure Time
4. A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs
5. On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical MOSFET Including Gate-Oxide Charge-Trapping Thermal Dependency: Application for Fast Transient Extreme Short-Circuit Operation
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