GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: From the Time-Zero to the Aging States-Reference-Cited by-同舟云学术

GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: From the Time-Zero to the Aging States

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Qu Yiming¹,Yan Chu²,Yu Xinwei²,Ding Yaru²,Zhao Yi¹

Affiliation:

1. School of Integrated Circuits, East China Normal University,Shanghai,China,200241

2. College of Information Science and Electronic Engineering, Zhejiang University,Hangzhou,China,310027

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118068.pdf?arnumber=10118068

Reference19 articles.

1. Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

2. Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

3. Analysis of the interactions of HCD under ”On” and “Off’ state modes for 28nm FDSOI AC RF modelling;seybou;IEEE International Reliability Physics Symposium (IRPS),2021

4. Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id- Vd characteristics;wang;IEEE International Reliability Physics Symposium (IRPS),2018

5. New observations on AC NBTI induced dynamic variability in scaled high-κ/Metal-gate MOSFETs: Characterization, origin of frequency dependence, and impacts on circuits

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14