Reliability Assessment of 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FETs
Author:
Affiliation:
1. Samsung Foundry Business, Samsung Electronics Hwaseong si,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117953.pdf?arnumber=10117953
Reference27 articles.
1. Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
2. Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic Technology
3. Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides
4. Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology
5. Enhanced Reliability of 7-nm Process Technology Featuring EUV
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