Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?-Reference-Cited by-同舟云学术

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Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?

Published:2000-04 Issue:4 Volume:21 Page:167-169
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Sune J.,Mura G.,Miranda E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/18017/00830970.pdf?arnumber=830970

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