Assessing Non-Conducting Off-State Induced Hard Breakdown for PD-SOI MOSFETs using an RF Measurement Technique
Author:
Affiliation:
1. Instituto Nacional de Astrofisica, Óptica y Electrónica (INAOE),Electronics Department,Tonantzintla,Mexico
2. GlobalFoundries Inc.,Malta,NY,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529489.pdf?arnumber=10529489
Reference22 articles.
1. Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?
2. Soft breakdown and hard breakdown in ultra-thin oxides
3. Consistent model for short-channel nMOSFET after hard gate oxide breakdown
4. Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation
5. New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes
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