Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits-Reference-Cited by-同舟云学术

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Comparison of ESD protection capability of lateral BJT, SCR and bidirectional. SCR for hi-voltage BiCMOS circuits

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Container-title:Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting
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Author:

Vashchenko V.,Concannon A.,Ter Beek M.,Hopper P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8083/22351/01042913.pdf?arnumber=1042913

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unique Rise Time Sensitivity Leading to Air Discharge System-Level ESD Failures in Bidirectional High Voltage SCRs;IEEE Transactions on Electron Devices;2022-05

2. Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection;Nanoscale Research Letters;2019-05-28

3. Compact and Fast-Response Voltage Clamp for Bi-Directional Signal Swing Interface Applications;IEEE Electron Device Letters;2018-12

4. Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking Structure;IEEE Transactions on Electron Devices;2017-10

5. High holding voltage segmentation stacking silicon-controlled-rectifier structure with field implant as body ties blocking layer;Japanese Journal of Applied Physics;2016-03-02

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