Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection-Reference-Cited by-同舟云学术

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Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection

Published:2019-05-28 Issue:1 Volume:14 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Wang Zhuo,Qi Zhao^ORCID,Liang Longfei,Qiao Ming,Li Zhaoji,Zhang Bo

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation Funded Project

Natural Science Foundation of Guangdong Province

Applied Fundamental Research Project of Sichuan Province

Fundamental Research Funds for the Central Universities

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-019-3017-8.pdf

Reference11 articles.

1. Vashchenko VA, Concannon A, terBeek M, Hopper P (2002) Comparison of ESD protection capability of lateral BJT, SCR and bidirectional SCR for high-voltage BiCMOS circuits, in Pro. BCTM:181–184. https://doi.org/10.1109/BIPOL.2002.1042913

2. Ker MD, Hsu KC (2005) Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits. IEEE Trans Device Mater Rel 5(2):235–249. https://doi.org/10.1109/TDMR.2005.846824

3. Liu Z, Liou JJ, Vinson J (2008) Novel silicon-controlled rectifier (SCR) for high-voltage electrostatic discharge (ESD) applications. IEEE Electron Device Letters 29(7):753–755. https://doi.org/10.1109/LED.2008.923711

4. Huang YC, Ker M-D (2013) A Latchup-immune and robust SCR device for ESD protection in 0.25-μm 5-V CMOS process. IEEE Electron Device Letters 34(5):674–676. https://doi.org/10.1109/LED.2013.2252456

5. Wang Z, Klebanov M, Cooper RB, Liang W, Courtney S, Liou JJ (2015) No-snapback silicon-controlled rectifier for electrostatic discharge protection of high-voltage ICs. IEEE Electron Device Letters 36(11):1121–1123. https://doi.org/10.1109/LED.2015.2479612

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