Static frequency dividers up to 133GHz in SiGe:C bipolar technology
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5655256/5667896/05667984.pdf?arnumber=5667984
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design and Phase Noise Measurements of an Ultrafast Dual-Modulus Prescaler in 130 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-01
2. A 142-GHz 4/5 Dual-Modulus Prescaler for Wideband and Low Noise Frequency Synthesizers in 130-nm SiGe:C BiCMOS;IEEE Microwave and Wireless Technology Letters;2023-06
3. A Low-Power 130-GHz Tuned Frequency Divider in 90-nm SiGe BiCMOS;IEEE Microwave and Wireless Technology Letters;2023-06
4. A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16
5. RF Performance Improvement of InP Frequency Divider by Using Enhanced f T -Doubler Technique;IEEE Microwave and Wireless Components Letters;2022-09
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