Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons-Reference-Cited by-同舟云学术

Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons

Published:2022 Issue: Volume:10 Page:443-451
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Schwierz Frank¹^ORCID,Ziegler Martin¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Information Technology, Micro- and Nanoelectronic Systems, Technische Universität Ilmenau, Ilmenau, Germany

Funder

Deutsche Forschungsgemeinschaft DFG

Carl Zeiss Foundation via the Project MemWerk

Federal State of Thuringia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09686073.pdf?arnumber=9686073

Reference103 articles.

1. Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal–Oxide–Semiconductor Field-Effect Transistors with High-kGate Dielectrics

2. A Graphene-Based Hot Electron Transistor

3. Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology

4. A 45nm low power system-on-chip technology with dual gate (logic and I/O) high-k/metal gate strained silicon transistors

5. A 65nm CMOS SOC technology featuring strained silicon transistors for RF applications;post;Tech Dig IEDM,2006

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