A Graphene-Based Hot Electron Transistor-Reference-Cited by-同舟云学术

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A Graphene-Based Hot Electron Transistor

Published:2013-03-22 Issue:4 Volume:13 Page:1435-1439
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Vaziri Sam¹,Lupina Grzegorz²,Henkel Christoph¹,Smith Anderson D.¹,Östling Mikael¹,Dabrowski Jarek²,Lippert Gunther²,Mehr Wolfgang²,Lemme Max C.¹³

Affiliation:

1. KTH Royal Institute of Technology, School of Information and Communication Technology, Isafjordsgatan 22, 16440 Kista, Sweden

2. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

3. University of Siegen, Hölderlinstrasse 3, 57076 Siegen, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl304305x

Reference21 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. A Graphene Field-Effect Device

3. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

4. Mobility and saturation velocity in graphene on SiO2

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