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A Kinetic Pathway to Orthorhombic HfZrO

Published:2023 Issue: Volume:11 Page:752-758
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Chen Guan-Hua¹^ORCID,Chen Yu-Rui²^ORCID,Zhao Zefu²^ORCID,Lee Jia-Yang³,Chen Yun-Wen²,Xing Yifan²^ORCID,Dobhal Rachit³,Liu C. W.¹^ORCID

Affiliation:

1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

2. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

3. Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

National Science and Technology Council, Taiwan

“Center for Advanced Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project

Ministry of Education (MOE) in Taiwan

Powerchip Semiconductor Manufacturing Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10329931.pdf?arnumber=10329931

Reference30 articles.

1. Impact of Oxygen Vacancy Content in Ferroelectric HZO films on the Device Performance

2. High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

3. Demonstration of Fatigue and Recovery Phenomena in Hf_0.5Zr_0.5O₂-based 1T1C FeRAM Memory Arrays

4. HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications

5. CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

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1. Stabilizing the Ferroelectric Phase of Hf0.5Zr0.5O2 Thin Films by Charge Transfer;Physical Review Letters;2024-07-18