Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation-Reference-Cited by-同舟云学术

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Analysis on Temperature Dependence of Hot Carrier Degradation by Mechanism Separation

Published:2020 Issue: Volume:8 Page:321-325
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Kim Jongsu^ORCID,Hong Kyushik^ORCID,Shin Hyungcheol

Funder

Samsung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/8949832/09039633.pdf?arnumber=9039633

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms;Micromachines;2024-01-12

3. A Pragmatic Model to Predict Future Device Aging;IEEE Access;2023

4. Comparative Analysis of Hot Carrier Degradation (HCD) in 10-nm Node nMOS/pMOS FinFET Devices;IEEE Transactions on Electron Devices;2020-12

5. TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD Space;IEEE Transactions on Electron Devices;2020-11

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