Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias-Reference-Cited by-同舟云学术

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Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias

Published:2022 Issue: Volume:10 Page:920-926
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Liang Ye¹^ORCID,Zhang Yuanlei¹^ORCID,Zhang Jingqun¹,He Xiuyuan¹^ORCID,Zhao Yinchao²,Cui Miao¹,Wen Huiqing¹^ORCID,Wang Mingxiang³^ORCID,Liu Wen¹^ORCID

Affiliation:

1. School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, China

2. School of Intelligent Manufacturing Ecosystem, Xi’an Jiaotong-Liverpool University, Suzhou, China

3. School of Electronic and Information Engineering, Soochow University, Suzhou, China

Funder

Suzhou Science and Technology program

Key Program Special Fund in Xi’an Jiaotong–Liverpool University

XJTLU Research Development Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09913635.pdf?arnumber=9913635

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga2O3 film;Journal of Materials Science: Materials in Electronics;2024-08

2. Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements;Materials Science in Semiconductor Processing;2024-07

3. Positive Bias Temperature Instability in SiC-Based Power MOSFETs;Micromachines;2024-06-30

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