Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Nur-Sultan, Kazakhstan
2. Department of Electrical and Computer Engineering, University of Calgary, Calgary, Canada
Funder
Collaborative Research Grant (CRP) at Nazarbayev University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09963557.pdf?arnumber=9963557
Reference52 articles.
1. An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique;lee;IEEE Trans Electron Devices,2001
2. Decision Tree Based Small-Signal Modelling of GaN HEMT and CAD Implementation
3. A new and Reliable Decision Tree Based Small-Signal Behavioral Modeling of GaN HEMT
4. Gaussian Process Regression for Small-Signal Modelling of GaN HEMTs
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