Ferroelectric-Metal Field-Effect Transistor with Recessed Channel for 1T-DRAM Application-Reference-Cited by-同舟云学术

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Ferroelectric-Metal Field-Effect Transistor with Recessed Channel for 1T-DRAM Application

Published:2021 Issue: Volume: Page:1-1
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Lee Kitae,Kim Sihyun,Lee Jong-Ho,Park Byung-Gook,Kwon Daewoong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/6423298/09614332.pdf?arnumber=9614332

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications;Journal of the Korean Physical Society;2024-05-16

2. Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications;IEEE Electron Device Letters;2024-05

3. Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation;Applied Physics Letters;2024-03-25

4. Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications;Materials Today Communications;2023-06

5. Simulation of a Recessed Channel Ferroelectric-Gate Field-Effect Transistor with a Dual Ferroelectric Gate Stack for Memory Application;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

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