LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification
Author:
Affiliation:
1. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA
2. Analog Technology Development, Texas Instruments Inc., Richardson, TX, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09761987.pdf?arnumber=9761987
Reference44 articles.
1. Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer
2. The Lowest On-Resistance and Robust 130nm BCDMOS Technology implementation utilizing HFP and DPN for mobile PMIC applications
3. Figure-of-Merit for Laterally Diffused MOSFETs with Rectangular and Semi-Circular Field Oxides
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