Characterization and Modeling of Quantum Dot Behavior in FDSOI Devices-Reference-Cited by-同舟云学术

Characterization and Modeling of Quantum Dot Behavior in FDSOI Devices

Published:2022 Issue: Volume:10 Page:600-610
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Pati Tripathi S.¹^ORCID,Bonen S.¹^ORCID,Bharadwaj A.¹^ORCID,Jager T.¹^ORCID,Nastase C.²^ORCID,Iordanescu S.²^ORCID,Boldeiu G.²^ORCID,Pasteanu M.²,Nicoloiu A.²^ORCID,Zdru I.²,Muller A.²^ORCID,Voinigescu S. P.¹^ORCID

Affiliation:

1. Edward S. Rogers Snr. Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, Canada

2. Micromachined Structures, Microwave Circuits and Devices Laboratory, IMT-Bucharest, Bucharest, Romania

Funder

National Sciences and Engineering Research Council of Canada

Ontario Centres of Excellence through 5G ECQOR Grant

EU Horizon 2020 FET OPEN Project “IQubits”

Romanian Authority for Scientific Research, UEFISCDI

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09777765.pdf?arnumber=9777765

Reference33 articles.

1. Ab initio DFT approaches to CMOS quantum dot simulation;bharadwaj,2022

2. Qubits made by advanced semiconductor manufacturing

3. Design Considerations for Spin Readout Amplifiers in Monolithically Integrated Semiconductor Quantum Processors

4. A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

5. Cryogenic characterization of 16 nm FinFET technology for quantum computing;han;Proc Euro Solid-State Device Res Conf (ESSDERC),2021

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