0.1 – 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations-Reference-Cited by-同舟云学术

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0.1 – 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations

Published:2011-04 Issue: Volume: Page:
ISSN:
Container-title:2011 IEEE 19th Signal Processing and Communications Applications Conference (SIU)
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Author:

Sayginer Mustafa,Yazgi Metin,Kuntman Hakan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5873567/5929571/05929782.pdf?arnumber=5929782

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 2-6 GHz Driver Amplifier with 27 dBm Output Power and >35 dB Flat Gain;2023 14th International Conference on Electrical and Electronics Engineering (ELECO);2023-11-30

2. A Broadband 29 dBm GaAs pHEMT Power Amplifier with High Gain;2023 IEEE Wireless Antenna and Microwave Symposium (WAMS);2023-06-07

3. 1–8 GHz high efficiency single-stage travelling wave power amplifier;Analog Integrated Circuits and Signal Processing;2012-04-25

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