A Broadband 29 dBm GaAs pHEMT Power Amplifier with High Gain
Author:
Affiliation:
1. Gallium Arsenide Enabling Technology Centre,Hyderabad
2. GAETEC,SSPL Cell,Hyderabad
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10242785/10242796/10242977.pdf?arnumber=10242977
Reference11 articles.
1. 0.1 – 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations
2. An Ultra-wideband GaAs pHEMT Distributed Power Amplifier
3. A DC to 22 GHz,2 W High Power Distributed Amplifier Using Stacked FET Topology with gate periphery tapering;fujii;Radio Frequency Integrated Circuits Symposium 2016 IEEE,0
4. Design and development of 0.5W GaAs pHEMT broadband amplifier for EW applications;bindu;EW Systems and Technologies (EWST) Conference 2023 conference,0
5. Analysis and Design of a Stacked Power Amplifier With Very High Bandwidth
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