Author:
Sayginer Mustafa,Yazgi Metin,Kuntman H. Hakan,Virdee Bal S.
Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Reference29 articles.
1. Lin, S., Eron, M., & Fathy, A. E. (2009). Development of ultra wideband, high efficiency, distributed power amplifiers using discrete GaN HEMTs. IET Circuits, Devices and Systems, 3(3), 135–142.
2. Wu, Q., Wu, Y., Fu, J., Jin, B., & Lee, J. C. (2005). An approach to ultra-broadband medium-power MMIC cascode-pair distributed amplifier design. IEICE Transactions, 88-C(7), 1353–1357.
3. Colantonio, P., Giannini, F., Giofre, R., & Piazzon, L. (2008). High-efficiency ultra-wideband power amplifier in GaN technology. Electronics Letters, 44(2), 130–131.
4. Sewiolo, B., Fischer, G., & Weigel, R. (2009). A 12-GHz high-efficiency tapered traveling-wave power amplifier with novel power matched cascode gain cells using SiGe HBT transistors. IEEE Transactions on Microwave Theory and Techniques, 57(10), 2329–2336.
5. Xie, C., & Pavio, A. (2007). Development of GaN HEMT based high power high efficiency distributed power amplifier for military applications (pp. 1–4). Washington: Military Communications Conference (MILCOM).
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