Author:
Lin S.,Fathy A.E.,Eron M.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Cited by
18 articles.
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1. Research on the newest GaN-Based solid-state power amplifier for CiADS project;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-10
2. Linearization of Multi-Octave Power Amplifiers with Strong Memory Effects;2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO);2020-12-07
3. A review of GaN HEMT broadband power amplifiers;AEU - International Journal of Electronics and Communications;2020-03
4. A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs;Journal of Electronic Materials;2020-01-02
5. Small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach;International Journal of RF and Microwave Computer-Aided Engineering;2019-12-28