Physical Cause and Impact of Negative Capacitance Effect in Ferroelectric P(VDF-TrFE) Gate Stack and Its Application to Landau Transistor-Reference-Cited by-同舟云学术

Physical Cause and Impact of Negative Capacitance Effect in Ferroelectric P(VDF-TrFE) Gate Stack and Its Application to Landau Transistor

Published:2022 Issue: Volume:2 Page:55-64
ISSN:2694-0884
Container-title:IEEE Open Journal of Ultrasonics, Ferroelectrics, and Frequency Control
language:
Short-container-title:IEEE Open J. Ultrason., Ferroelect., Freq. Contr.

Author:

Singh Khoirom Johnson¹^ORCID,Chauhan Nitanshu¹^ORCID,Bulusu Anand¹^ORCID,Dasgupta Sudeb¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Microelectronics and VLSI Group, Indian Institute of Technology Roorkee, Roorkee, India

Funder

Ministry of Science and Technology, Department of Science and Technology, Government of India, under the Innovation in Science Pursuit for Inspired Research (INSPIRE) Fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering

Link

http://xplorestaging.ieee.org/ielx7/9292640/9674185/09768803.pdf?arnumber=9768803

Reference32 articles.

1. Ferroelectric transistor model based on self-consistent solution of 2D Poisson’s, non-equilibrium Green’s function and multi-domain Landau Khalatnikov equations;saha;IEDM Tech Dig,2017

2. New Generation of Predictive Technology Model for Sub-45 nm Early Design Exploration

3. Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs

4. Structural phase transition in ferroelectric fluorine polymers: X-ray diffraction and infrared/Raman spectroscopic study

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