Investigation of Repetitive Short Circuit Stress as a Degradation Metric in Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs
Author:
Affiliation:
1. School of Electrical Engineering, University of Bristol,UK,BS8 1UB
2. School of Electrical Engineering, University of Warwick,UK,CV4 7AL
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9935821/9936047/09936284.pdf?arnumber=9936284
Reference17 articles.
1. Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions
2. Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs
3. A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis
4. Short Circuit Ruggedness of New Generation 1.2 kV SiC MOSFETs
5. Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs;IEEE Open Journal of Industry Applications;2024
2. Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events;IEEE Transactions on Device and Materials Reliability;2023-12
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