InAlAs/InGaAs metamorphic low-noise HEMT-Reference-Cited by-同舟云学术

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InAlAs/InGaAs metamorphic low-noise HEMT

Published:1997 Issue:1 Volume:7 Page:6-8
ISSN:1051-8207
Container-title:IEEE Microwave and Guided Wave Letters
language:
Short-container-title:IEEE Microw. Guid. Wave Lett.

Author:

Kawano M.,Kuzuhara T.,Kawasaki H.,Sasaki F.,Tokuda H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Physics and Astronomy,General Engineering

Link

http://xplorestaging.ieee.org/ielx4/75/12048/00553703.pdf?arnumber=553703

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Studies on Steady-State and Transient Electronic Transport in In0.52Al0.48As;Journal of Electronic Materials;2021-04-15

2. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

3. Fabrication of 80-nm T-gate high indium In0.7Ga0.3As/In0.6Ga0.4As composite channels mHEMT on GaAs substrate with simple technological process;Journal of Semiconductors;2016-02

4. Metamorphic HEMT Technology Exemplified by InAlAs/InGaAs/GaAs HEMTs;Lattice Engineering;2012-11-27

5. Investigation on the thermal behavior of 0.15μm gate-length In0.4Al0.6As/In0.4Ga0.6As MHEMT;Microelectronics Reliability;2012-06

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