Investigation on the thermal behavior of 0.15μm gate-length In0.4Al0.6As/In0.4Ga0.6As MHEMT-Reference-Cited by-同舟云学术

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Investigation on the thermal behavior of 0.15μm gate-length In0.4Al0.6As/In0.4Ga0.6As MHEMT

Published:2012-06 Issue:6 Volume:52 Page:969-973
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lin Che-Kai,Chiu Hsien-Chin,Lin Chao-Wei,Kao Hsuan-ling,Chien Feng-Tso

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Metamorphic InAlAs/InGaAs HEMT’s on GaAs substrates with a novel composite channels design;Chertouk;IEEE Electron Dev Lett,1996

2. A 0.1 micron gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs;Wang;IEEE Trans Electron Dev,1988

3. Microwave performance of 0.4 micron gate metamorphic In0.29Al0.71As/In0.3Ga0.7As HEMT on GaAs substrate;Win;Electron Lett,1993

4. InAlAs/InGaAs metamorphic low-noise HEMT;Kawano;IEEE Microwave Guided Wave Lett,1997

5. InP-based HEMT’s with Al0.48In0.52AsxP1−x Schottky layer;Jelloain;IEEE Electron Dev Lett,1994

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