Origin of High Mobility in InSnZnO MOSFETs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/8232486/08546783.pdf?arnumber=8546783
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits;Communications Materials;2024-09-11
2. Compositionally engineered amorphous InZnO thin-film transistor with high mobility and stability via atmospheric pressure spatial atomic layer deposition;Journal of Industrial and Engineering Chemistry;2024-05
3. Bilayer channel structure to improve the stability of solution-processed metal oxide transistors under AC stress;Materials Science in Semiconductor Processing;2024-03
4. Reliability issues of amorphous oxide semiconductor-based thin film transistors;Journal of Materials Chemistry C;2024
5. C-Axis Aligned Crystalline InSnZnO Thin Film Using Mist Chemical Vapor Deposition and Deposition/Annealing Cyclic Method for Thin-Film Transistors Applications;IEEE Transactions on Electron Devices;2023-07
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