Compositionally engineered amorphous InZnO thin-film transistor with high mobility and stability via atmospheric pressure spatial atomic layer deposition-Reference-Cited by-同舟云学术

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Compositionally engineered amorphous InZnO thin-film transistor with high mobility and stability via atmospheric pressure spatial atomic layer deposition

Published:2024-05 Issue: Volume: Page:
ISSN:1226-086X
Container-title:Journal of Industrial and Engineering Chemistry
language:en
Short-container-title:Journal of Industrial and Engineering Chemistry

Author:

Lee Chi-Hoon^ORCID,Yoo Kwang Su,Kim Dong-Gyu,Park Chang-Kyun^ORCID,Park Jin-Seong^ORCID

Publisher

Elsevier BV

Reference60 articles.

1. Material characteristics and applications of transparent amorphous oxide semiconductors

2. Amorphous oxide semiconductors : IGZO and related materials for display and memory;Hosono,2022

3. A Nanostructure Based Electrochemical Sensor for Square Wave Voltammetric Determination ofL-Cysteine in the Presence of High Concentration of Folic Acid

4. SnS2 Nanograins on Porous SiO2 Nanorods Template for Highly Sensitive NO2 Sensor at Room Temperature with Excellent Recovery

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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