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Characterization of RF Noise in UTBB FD-SOI MOSFET

  • Published:2016-11 Issue:6 Volume:4 Page:379-386
  • ISSN:2168-6734
  • Container-title:IEEE Journal of the Electron Devices Society
  • language:
  • Short-container-title:IEEE J. Electron Devices Soc.

Author:

Kushwaha PragyaORCID,Dasgupta AvirupORCID,Sahu Yogendra,Khandelwal Sourabh,Hu Chenming,Chauhan Yogesh Singh

Funder

Semiconductor Research Corporation

Berkeley Device Modeling Center

Science & Engineering Research Board

Ramanujan Fellowship Research Grant

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. Efficient RF Small-Signal Parasitic Parameters Extraction Technique For The Advanced MOSFETs;2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM);2023-11-28

3. Improved electrical and RF performance of a junctionless vertical super-thin body (VSTB) FET by increased substrate doping;Materials Science in Semiconductor Processing;2021-11

4. Thermal Noise Measurement and Characterization for Modern Semiconductor Devices;IEEE Instrumentation & Measurement Magazine;2021-04

5. W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs;2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2020-08
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