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W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs

  • Published:2020-08 Issue: Volume: Page:
  • ISSN:
  • Container-title:2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Le Q. H.1,Huynh D. K.1,Wang D.1,Zhao Z.2,Lehmann S.2,Kampfe T.1,Rudolph M.3

Affiliation:

1. Fraunhofer Institute for Photonic Microsystems (IPMS),CMOS Integrated RF & AI,Dresden,Germany

2. GlobalFoundries,Dresden,Germany

3. Brandenburg University of Technology,Ulrich-L.-Rohde Chair of Radio Frequency and Microwave Techniques,Cottbus,Germany

Publisher

IEEE

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Accuracy in On-Wafer Noise Figure Measurements at Sub-Terahertz Frequencies;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Efficient RF Small-Signal Parasitic Parameters Extraction Technique For The Advanced MOSFETs;2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM);2023-11-28

3. 22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range;2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems;2023-01-22

4. Invited Talk #4: SOI CMOS technologies for RF and millimeter-wave communication systems;2022 International Conference on IC Design and Technology (ICICDT);2022-09-21

5. A highly linear 79 GHz Low-Noise Amplifier for Civil-Automotive Radars in 22 nm FD-SOI CMOS with -6 dBm iP1dB and 5 dB NF;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03
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